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HS-6254RH
Data Sheet August 1999 File Number 4425.2
Radiation Hardened Ultra High Frequency NPN Transistor Array
The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. The high FT (8GHz) and low noise figure (3.5dB) of these transistors make them ideal for use in high frequency amplifier and mixer applications. Monolithic construction of the five transistors provides the closest electrical and thermal matching possible. Access is provided to each terminal of the transistors for maximum application flexibility. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-97641. A "hot-link" is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp
Features
* Electrically Screened to SMD # 5962-97641 * QML Qualified per MIL-PRF-38535 Requirements * Radiation Environment - Gamma Dose () . . . . . . . . . . . . . . . . . 3 x 105RAD(Si) - SEL Immune . . . . . . . Bonded Wafer Dielectric Isolation * Gain Bandwidth Product (FT) . . . . . . . . . . . . . .8GHz (Typ) * Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 70 (Typ) * Early Voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V (Typ) * Noise Figure (50) at 1GHz. . . . . . . . . . . . . . .3.5dB (Typ) * Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)
Applications
* High Frequency Amplifiers and Mixers - Refer to Application Note 9315 * High Frequency Converters * Synchronous Detectors
Pinouts
HS1-6254RH (CERDIP) GDIP1-T16 OR HS1-6254RH (SBDIP) CDIP2-T16 TOP VIEW
Q1C 1 Q2C 2 Q2E 3 Q2B 4 NC 5 Q3C 6 Q3E 7 Q3B 8 Q3 Q4 Q2 Q5 Q1 16 Q1E 15 Q1B 14 Q5B 13 Q5E 12 Q5C 11 Q4C 10 Q4E 9 Q4B
Ordering Information
ORDERING NUMBER HS0-6254RH-Q 5962F9764101VEA 5962F9764101VEC 5962F9764101VXC HS1-6254RH/SAMPLE INTERNAL MKT. NUMBER HS0-6254RH-Q HS1-6254RH-Q HS1B-6254RH-Q HS9-6254RH-Q HS1-6254RH/SAMPLE TEMP. RANGE (oC) 25 -55 to 125 -55 to 125 -55 to 125 -55 to 125
HS9-6254RH (FLATPACK) CDFP4-F16 TOP VIEW
Q1C Q2C Q2E Q2B NC Q3C Q3E Q3B 1 2 3 4 5 6 7 8 Q3 Q4 Q5 Q2 Q1 16 15 14 13 12 11 10 9 Q1E Q1B Q5B Q5E Q5C Q4C Q4E Q4B
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
HS-6254RH Burn-In Circuit
10.5V 0.5V 5.5V 0.5V 0.01F 100 5% 0.01F 1 2 3 1K 5% 4 NC 5 6 7 1K 5% 8 Q3 Q4 Q2 Q5 Q1 16 15 14 13 12 11 10 9 1K 5% 1K 5% 1K 5%
Irradiation Circuit
10.5V 0.5V 100 5% 0.01F 1 2 3 1K 5% 4 NC 5 6 7 1K 5% 5V 0.5V 0.01F 8 Q3 Q4 Q2 Q5 Q1 16 15 14 13 12 11 10 9 1K 5% 1K 5% 1K 5%
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HS-6254RH Die Characteristics
DIE DIMENSIONS: 52 mils x 52.8 mils x 15 mils 1 mil 1320m x 1340m x 381m 25.4m INTERFACE MATERIALS: Glassivation: Type: Nitride Thickness: 4kA 0.5kA Top Metallization: Type: Metal 1: AlCu (2%)/TiW Thickness: Metal 1: 8kA 0.5kA Type: Metal 2: AlCu (2%) Thickness: Metal 2: 16kA 0.8kA Substrate: UHF-1X Bonded Wafer, DI Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Floating ADDITIONAL INFORMATION: Worst Case Current Density: 3.04 x 105A/cm2 Transistor Count: 5
Metallization Mask Layout
HS-6254RH
2 1 16 15
3
14
4
13
5
12
6
11
7
8
9
10
NOTE: Pad numbers correspond to the 16 lead pinout.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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